美国刻蚀设备厂商Lam Research Corp.日前表示，公司已向客户出货第一台2300 Syndion刻蚀设备。Lam没有透露该客户的名字。据悉，该系统面向三维（3D）通孔硅（through-silicon via，TSV）刻蚀设备技术市场，其刻蚀的通孔宽度在2微米至100微米，深度在20微米至400微米之间。

据悉，300mm 2300 Syndion的产品发布定在2008上半年。“我们相信我们是第一个出货300mm TSV 刻蚀系统的厂商。”Lam Research公司软件、MEMS和3D IC产品部门执行董事Jackie Seto说道。

Lam已经为TSV刻蚀技术的开发花费了两年的时间，用以支持开发需要深度硅刻蚀的MEMS产品。TSV互连技术支持芯片堆叠和晶圆堆叠结构，免去了引线键合，降低了封装密度，有利于改善产品性能（更快的速度和更低的功耗）。

据称，Syndion系统的技术建立在Lam Research公司专利的高密度TCP(R)平面等离子源的基础之上，能够提供优异的刻蚀速率均匀性和形貌对称性。此外，TCP技术采用了Lam Research专有的偏压控制技术，因此拥有良好的工艺可重复性。

新闻通稿原文（英文）：

Lam Research Corporation Ships First 300 mm 2300 Syndion System for
3-D IC Through-Silicon Via Etch

FREMONT, Calif., August 20, 2007—Lam Research Corporation (NASDAQ: LRCX) today announced it has shipped its first 300 mm 2300 Syndion etch system, designed for 3-D IC through-silicon via (TSV) etch applications. Additional 300 mm shipments are expected this quarter. Production release of the 2300 Syndion is planned during the first half of 2008.

"We believe we are the first supplier to ship a 300 mm system for TSV etch applications," said Lam Research"s Jackie Seto, managing director, Software, MEMS, and 3-D IC Products, "and, by leveraging our extensive 300 mm and MEMS deep silicon etch production experience, we are taking a leading role in establishing the benchmarks for these challenging etch applications."

TSVs provide the interconnects for die-to-die and wafer-to-wafer stacking, eliminating wire bonding to increase device packing density (smaller form factor) and improve performance (higher speed and lower power). TSVs are created during wafer fabrication or later during assembly and packaging, and process integration schemes vary widely.

"Our customers are still in the early stages of development," said Seto, "so process flexibility is essential. The Syndion system has demonstrated etch capability for a wide range of integration schemes, with excellent uniformity across 300 mm wafers. The system has also etched vias ranging from 2 to 100 microns wide with depths of 20 microns to greater than 400 microns deep, while meeting our customers" exacting profile requirements."

The Syndion system’s technology is based on Lam Research"s patented high-density TCP planar plasma source, which provides unprecedented etch rate uniformity and profile symmetry, preventing tilting. TCP technology operates in clean mode and employs Lam Research’s proprietary bias voltage control for exceptional process repeatability.

Built on Lam Research’s production-proven 2300 platform, the system enables both 200 mm and
300 mm operation and can be configured with process modules for both wafer sizes on the same system.

Lam Research has been working for more than two years with major semiconductor manufacturers around the world to develop TSV applications. The Company"s entrance into the TSV market leverages its etch market leadership with more than 1,600 TCP-based 300 mm etch chambers on its 2300 platform and extensive deep silicon etch experience with MEMS based applications.

Lam Research Corporation, one of Fortune magazine"s “100 Fastest-Growing Companies” in 2006, is a major supplier of wafer fabrication equipment and services to the world’s semiconductor industry and market share leader in plasma etch. Lam Research"s common stock trades on The NASDAQ Global Select MarketSM under the symbol LRCX. Lam Research is a NASDAQ-100 company. For more information visit our web site at http://www。lamresearch。com.